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| MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE PM200CS1D060 FEATURE Inverter + Drive & Protection IC * 3 phase 200A/600V CSTBTTM (The Current senser and the thermal senser with a build-in CSTBTTM.) * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 120 7 106 0.3 10.6 6.5 5-2.54 2-2.54 2-2.54 23.79 10.16 10.16 8.5 2-2.54 10.16 16.5 1 4 7 10 15 67.4 5.57 9 V U N P 2-5.5 MOUNTING HOLES 50 39 25 W 2.5 15 19 19 19 19 5-M4 NUT (10) 16.5 Terminal code 11.6 LABEL 1. VWPC 2. WP 3. VWP1 4. VVPC 5. VP 6. VVP1 7. VUPC 8. UP 9. VUP1 10. VNC 31.5 + 1 - 0.5 11. 12. 13. 14. 15. VN1 WN VN UN Fo 28 30 May 2009 1 50 MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo = 1.5k Fo Rfo VNC WN VN1 VN UN WP VWPC VP VWP1 VVPC VVP1 VUPC UP VUP1 Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Vcc Gnd In Vcc Gnd In Vcc Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT N W V U P MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C (Note-1) (Note-1) Ratings 600 200 400 694 -20 ~ +150 Unit V A A W C *: Tc measurement point is just under the chip. CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Applied between : FO-VNC Sink current at FO terminals Ratings 20 20 20 20 Unit V V V mA May 2009 2 MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 400 500 -40 ~ +125 2500 Unit V V C Vrms THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Condition Inverter IGBT part (per 1 element) Inverter FWDi part (per 1 element) Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) Min. -- -- -- Limits Typ. -- -- -- Max. 0.18 0.27 0.046 Unit C/W (Note-1) Tc (under the chip) measurement point is below. arm axis X Y UP IGBT FWDi 21.4 21.4 -4.8 4.9 VP IGBT FWDi 65.0 65.0 -4.8 4.9 WP IGBT FWDi 90.0 90.0 -4.8 4.9 UN IGBT FWDi 36.0 36.0 -0.6 -10.8 VN IGBT FWDi 51.0 51.0 -0.6 -10.8 (unit : mm) WN IGBT FWDi 76.0 76.0 -0.6 -10.8 Bottom view Y X P N U V W ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 200A VCIN = 0V, Pulsed (Fig. 1) -IC = 200A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 300V, IC = 200A Tj = 125C Inductive Load VCE = VCES, VD = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.4 -- -- -- -- -- -- Limits Typ. 1.90 1.90 1.90 0.8 0.3 0.4 1.4 0.3 -- -- Max. 2.60 2.70 2.90 1.8 0.6 1.0 2.4 0.6 1 10 Unit V V Switching Time s (Fig. 3,4) Tj = 25C Tj = 125C Collector-Emitter Cutoff Current mA May 2009 3 MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OT(hys) UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width output output output output VD = 15V, VCIN = 15V Condition VN1-VNC V*P1-V*PC Min. -- -- 1.2 1.7 300 -- 135 -- 11.5 -- -- -- 1.0 Limits Typ. 6 2 1.5 2.0 -- 1.0 -- 20 12.0 12.5 -- 10 1.8 Max. 12 4 1.8 2.3 -- -- -- -- 12.5 -- 0.01 15 -- Unit mA V A s C V mA ms Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC -20 Tj 125C, VD = 15V (Fig. 3,6) VD = 15V Detect Temperature of IGBT chip -20 Tj 125C VD = 15V, VCIN = 15V VD = 15V (Fig. 3,6) Trip level Hysteresis Trip level Reset level (Note-2) (Note-2) (Note-2) Fault Fault Fault Fault is given only when the internal SC, OT & UV protection. of SC, OT & UV protection operate by lower arms. of SC protection given pulse. of OT, UV protection given pulse while over trip level. MECHANICAL RATINGS AND CHARACTERISTICS Symbol -- -- Parameter Mounting torque Weight Mounting part Main terminal part -- Condition screw : M5 screw : M4 Min. 2.5 1.5 -- Limits Typ. 3.0 1.7 400 Max. 3.5 2.0 -- Unit N*m g RECOMMENDED CONDITIONS FOR USE Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 400 15.0 1.5 0.8 9.0 20 2.0 Unit V V V kHz s (Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak 5V/s 2V 15V GND May 2009 4 MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W,B) IN Fo IN Fo P, (U,V,W,B) VCIN (0V) V Ic VCIN (15V) V -Ic VD (all) U,V,(N) VD (all) U,V,W,B, (N) Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test a) Lower Arm Switching P VCIN (15V) VCIN Signal input (Upper Arm) Signal input (Lower Arm) Fo trr U,V VCE Irr Ic 90% CS Vcc 90% N b) Upper Arm Switching VCIN Signal input (Upper Arm) Signal input (Lower Arm) VD (all) P Ic 10% tc(on) VCIN 10% 10% tc(off) 10% U,V CS Vcc td(on) tr td(off) tf VCIN (15V) Fo (ton = td(on) + tr) N (toff = td(off) + tf) VD (all) Ic Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform VCIN Short Circuit Current P, (U,V,W,B) A IN Fo Constant Current SC Trip Pulse VCE VCIN (15V) Ic VD (all) U,V,W,B, (N) Fo toff(SC) Fig. 5 ICES Test Fig. 6 SC test waveform IPM' input signal VCIN (Upper Arm) 0V IPM' input signal VCIN (Lower Arm) 1.5V 2V 1.5V t 0V 2V 1.5V 2V t tdead tdead tdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value Fig. 7 Dead time measurement point example May 2009 5 MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE P 20k 10 VUP1 Vcc OT OUT Si VD IF UP VUPC 0.1 In GND GND Vcc OT OUT Si In GND GND Vcc OT OUT Si In GND GND Vcc Fo OT OUT Si + - U VVP1 VD VP VVPC VWP1 V M VD 20k WP VWPC W IF 10 UN 0.1 In GND GND N OT 20k IF 10 Vcc VN Fo In OUT Si 0.1 20k GND GND VN1 10 Vcc Fo In OT OUT Si VD IF WN 0.1 VNC GND GND 5V 1k Fo Rfo : Interface which is the same as U-phase Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. * * * * * * * May 2009 6 MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 450 Tj = 25C 3.0 2.5 2.0 1.5 1.0 0.5 0 COLLECTOR CURRENT IC (A) 400 350 300 250 200 150 100 50 0 0 0.5 1.0 VD = 17V VD = 15V 15V 13V Tj = 25C Tj = 125C 0 100 200 300 400 500 1.5 2.0 2.5 3.0 COLLECTOR-EMITTER VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR RECOVERY CURRENT -IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 12 13 14 15 IC = 200A Tj = 25C Tj = 125C 16 17 18 VD = 15V 102 7 5 3 2 101 7 5 3 2 100 Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 2.5 3.0 CONTROL POWER SUPPLY VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V) SWITCHING TIME tc(on), tc(off) (s) SWITCHING TIME ton, toff (s) SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) 101 VCC = 300V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load 2 SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 100 7 5 4 3 2 tc(off) toff 100 7 5 4 3 2 10-1 7 5 4 3 2 tc(on) VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 ton 10-1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) 10-2 0 10 2 3 5 7 101 COLLECTOR CURRENT IC (A) May 2009 7 MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE SWITCHING LOSS CHARACTERISTICS (TYPICAL) SWITCHING LOSS Eon, Eoff (mJ/pulse) 12 VCC = 300V 11 VD = 15V Tj = 25C 10 Tj = 125C 9 Inductive load 8 7 6 5 4 3 2 1 0 0 40 80 120 0.7 0.6 0.5 0.4 0.3 0.2 0.1 trr Irr 70 60 50 40 30 20 10 0 40 80 120 160 200 0 240 Eoff 160 200 240 0 COLLECTOR CURRENT IC (A) COLLECTOR RECOVERY CURRENT -IC (A) SWITCHING LOSS Err (mJ/pulse) SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) 6 VCC = 300V VD = 15V 5 Tj = 25C Tj = 125C 4 Inductive load 3 2 1 0 ID VS. fc CHARACTERISTICS (TYPICAL) 60 50 40 VD = 15V Tj = 25C Tj = 125C N-side ID (mA) 30 20 10 0 P-side 0 40 80 120 160 200 240 0 5 10 15 20 25 COLLECTOR RECOVERY CURRENT -IC (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 UVt 18 UVr 16 14 SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2.0 VD = 15V 1.8 1.6 1.4 1.2 UVt /UVr 12 10 8 6 4 2 0 -50 0 50 Tj (C) 100 150 SC 1.0 0.8 0.6 0.4 0.2 0 -50 0 50 Tj (C) 100 150 8 RECOVERY CURRENT lrr (A) May 2009 Eon RECOVERY TIME trr (s) DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1.0 100 VCC = 300V Tj = 25C 0.9 VD = 15V Tj = 125C 90 Inductive load 0.8 80 MITSUBISHI PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 7 5 3 2 10-1 7 5 3 2 10-2 Single Pulse 7 5 IGBT part; 3 Per unit base = Rth(j - c)Q = 0.18C/ W 2 FWDi part; Per unit base = Rth(j - c)F = 0.27C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 t(sec) May 2009 9 |
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